By D. B. M. Klaassen, B. Nauta, R. R. J. Vanoppen (auth.), Willy Sansen, Rudy J. van de Plassche, Johan H. Huijsing (eds.)
This publication includes the revised contributions of the entire audio system of the 5th AACD Workshop which used to be held in Lausanne on April 2-4, 1996. It used to be prepared by means of Dr Vlado Valence of the EPFL collage and MEAD of Lausanne. this system consisted of six tutorials according to day in the course of 3 days. The tutorials have been offered by means of specialists within the box. They have been chosen by way of a application committee including Prof. Willy Sansen of the Katholieke Universiteit Leuven, Prof. Rudy van de Plassche of Philips learn and the college of know-how Eindhoven and Prof. 10han Huijsing of the Delft college of expertise. the 3 subject matters pointed out above were chosen as a result of their significance in current days analog layout. the opposite subject matters which were mentioned sooner than are: in 1992 : Operational amplifiers Analog to electronic convereters Analog laptop aided layout in 1993 : combined reduction cicuit layout Sensor interface circuits verbal exchange circuits in 1994 : Low-power low-voltage layout built-in filters shrewdpermanent strength circuits in 1995 : Low-noise, low-power, low-voltage layout Mixed-mode layout with CAD instruments Voltage, present and time references every one AACD workhop has given upward thrust to the e-book of a publication via Kluwer entitled "Analog Circuit Design". this can be hence the 5th ebook. This sequence of books offers a beneficial evaluate of all analog circuit layout thoughts and achievements. it's a reference for whoever is engaged during this discipline.
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Extra resources for Analog Circuit Design: MOST RF Circuits, Sigma-Delta Converters and Translinear Circuits
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30 Gain (dB) IP3 dBm o [ ? 6: Simulated 1P3 versus bias current In the bipolar configuration, the gain, due to the high gm, is 10 dB higher than the corresponding NMOS amplifier. On the other hand, the IP3 is limited to about -10 dBm (32 m V zero-to-peak on 50 ohm input load) due to the input diode distortion [II]. In the NMOS solution, a high IP3 (10 to 15 dB higher than in bipolar case) is obtained according to the quadratic input characteristic law and the large input dynamic range of MOS devices.